|
Product Attribute |
Attribute Value |
|
Vds - Drain-Source Breakdown Voltage: |
60 V |
|
Id - Continuous Drain Current: |
1.1 A |
|
Rds On - Drain-Source Resistance: |
230 mOhms |
|
Vgs - Gate-Source Voltage: |
- 20 V, + 20 V |
|
Vgs th - Gate-Source Threshold Voltage: |
1.5 V |
|
Qg - Gate Charge: |
2.3 nC |
|
Minimum Operating Temperature: |
- 55℃ |
|
Maximum Operating Temperature: |
+ 150℃ |
|
Pd - Power Dissipation: |
470 mW |
|
Fall Time: |
3.5 ns |
|
Forward Transconductance - Min: |
4 S |
|
Typical Turn-Off Delay Time: |
12.2 ns |
|
Typical Turn-On Delay Time: |
6.6 ns |
|
Unit Weight: |
0.000282 oz |
Automotive Power MOSFET. -60 V, 230 mOhm, Single P-Channel Logic Level, SOT-23. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. .
