|
Product Attribute |
Attribute Value |
|
Vds - Drain-Source Breakdown Voltage: |
20 V |
|
Id - Continuous Drain Current: |
3.2 A |
|
Rds On - Drain-Source Resistance: |
80 mOhms |
|
Vgs - Gate-Source Voltage: |
- 12 V, + 12 V |
|
Vgs th - Gate-Source Threshold Voltage: |
650 mV |
|
Qg - Gate Charge: |
2.4 nC |
|
Minimum Operating Temperature: |
- 55 ℃ |
|
Maximum Operating Temperature: |
+ 150 ℃ |
|
Pd - Power Dissipation: |
1.25 W |
|
Fall Time: |
3 ns |
|
Forward Transconductance - Min: |
9 S |
|
Height: |
0.94 mm |
|
Length: |
2.9 mm |
|
Typical Turn-Off Delay Time: |
12 ns |
|
Typical Turn-On Delay Time: |
6.5 ns |
|
Width: |
1.3 mm |
|
Unit Weight: |
0.000282 oz |
This is a 20 V N-Channel Power MOSFET.
