|
Product Attribute |
Attribute Value |
|
Vds - Drain-Source Breakdown Voltage: |
30 V |
|
Id - Continuous Drain Current: |
1.7 A |
|
Rds On - Drain-Source Resistance: |
85 mOhms |
|
Vgs - Gate-Source Voltage: |
- 20 V, + 20 V |
|
Vgs th - Gate-Source Threshold Voltage: |
1 V |
|
Qg - Gate Charge: |
5 nC |
|
Minimum Operating Temperature: |
- 55℃ |
|
Maximum Operating Temperature: |
+ 150℃ |
|
Pd - Power Dissipation: |
500 mW |
|
Fall Time: |
32 ns |
|
Height: |
1.12 mm |
|
Length: |
2.9 mm |
|
Typical Turn-Off Delay Time: |
13 ns |
|
Typical Turn-On Delay Time: |
10 ns |
|
Width: |
1.4 mm |
|
Unit Weight: |
0.001058 oz |
SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using onsemi's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
