|
Product Attribute |
Attribute Value |
|
If - Forward Current: |
40 A |
|
Vrrm - Repetitive Reverse Voltage: |
650 V |
|
Vf - Forward Voltage: |
1.5 V |
|
Ifsm - Forward Surge Current: |
105 A |
|
Ir - Reverse Current: |
200 uA |
|
Minimum Operating Temperature: |
- 55 C |
|
Maximum Operating Temperature: |
+ 175 C |
|
Pd - Power Dissipation: |
150 W |
|
Vr - Reverse Voltage: |
650 V |
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
